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Part Number : 2SA1962-O(Q)
Manufacturer : Toshiba Electronic Devices and Storage Corporation
Description : 2SA1962-O(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : 2SA1962-O(Q) More Information
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Pricing(USD) : $0.00
Remark : Manufacturer: Toshiba Electronic Devices and Storage Corporation. Rozee is one of the Distributors. Wide range of applications.
Mount : Through Hole
Polarity : PNP
Packaging : Bulk
Number of Pins : 3
Number of Elements : 1
Transition Frequency : 30 MHz
Max Collector Current : 15 A
Gain Bandwidth Product : 30 MHz
Min Operating Temperature : -55 °C
Collector Base Voltage (VCBO) : 230 V
Collector Emitter Breakdown Voltage : 230 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - Single
Qty : 418 In Stock
Applications : Infotainment & cluster Motor drives Enterprise projectors
hFE Min : 55
Frequency : 30 MHz
Current Rating : -15 A
Power Dissipation : 130 W
Voltage Rating (DC) : -230 V
Element Configuration : Single
Max Power Dissipation : 130 W
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 5 V
Collector Emitter Voltage (VCEO) : 230 V
Collector Emitter Saturation Voltage : -1.5 V
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