Part Number :
STGF10NB60SD
Manufacturer :
STMicroelectronics
Description :
STGF10NB60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Rozee
Lifecycle :
New from this manufacturer
Delivery :
DHL、UPS、FedEx、Registered Mail
Payment :
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More Information :
STGF10NB60SD More Information
ECAD :
Request Free CAD Models
Pricing(USD) :
$1.93
Remark :
Manufacturer: STMicroelectronics.
Rozee is one of the Distributors.
Wide range of applications.
Mount :
Through Hole
Height :
20 mm
Rise Time :
460 ns
Case/Package :
TO-220-3
Number of Pins :
3
Forward Voltage :
1.9 V
Turn-On Delay Time :
460 ns
Voltage Rating (DC) :
600 V
Max Breakdown Voltage :
600 V
Max Power Dissipation :
25 W
Max Operating Temperature :
150 °C
Continuous Collector Current :
23 A
Max Junction Temperature (Tj) :
150 °C
Collector Emitter Voltage (VCEO) :
600 V
Collector Emitter Saturation Voltage :
1.35 V
Products Category :
Discrete Semiconductor - Transistors - IGBTs - Single
Qty :
5616 In Stock
Applications :
Grid infrastructure
Infotainment & cluster
Width :
4.6 mm
Length :
10.4 mm
Schedule B :
8541290080
Current Rating :
10 A
Forward Current :
20 A
Power Dissipation :
25 W
Turn-Off Delay Time :
1.2 µs
Element Configuration :
Single
Max Collector Current :
23 A
Reverse Recovery Time :
37 ns
Min Operating Temperature :
-55 °C
Continuous Drain Current (ID) :
20 A
Drain to Source Voltage (Vdss) :
600 V
Collector Emitter Breakdown Voltage :
600 V
Collector Base Breakdown Voltage (VCES) :
600 V
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